1 2008-10-20 BC817SU 5 4 6 3 2 1 npn silicon af transistor ? for general af applications ? high collector current ? high current gain ? low collector-emitter saturation voltage ? pb-free (rohs compliant) package 1) ? qualified according aec q101 type marking pin configuration package BC817SU b6s 1=e 2=c 3=c 4=c 5=c 6=b sc74 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 45 v collector-base voltage v cbo 50 emitter-base voltage v ebo 5 collector current i c 500 ma peak collector current, t p 10 ms i cm 1 a base current i b 100 ma peak base current i bm 200 total power dissipation- t s 100c p tot 1000 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 50 k/w 1 pb-containing package may be available upon special request 2 for calculation of r thja please refer to application note thermal resistance
2 2008-10-20 BC817SU electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 v (br)ceo 45 - - v collector-base breakdown voltage i c = 10 a, i e = 0 v (br)cbo 50 - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - - collector-base cutoff current v cb = 25 v, i e = 0 v cb = 25 v, i e = 0 , t a = 150 c i cbo - - - - 0.1 50 a emitter-base cutoff current v eb = 4 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 100 ma, v ce = 1 v i c = 500 ma, v ce = 1 v h fe 160 40 250 - 400 - - collector-emitter saturation voltage 1) i c = 500 ma, i b = 50 ma v cesat - - 0.4 v base emitter saturation voltage 1) i c = 500 ma, i b = 50 ma v besat - - 1.2 ac characteristics transition frequency i c = 50 ma, v ce = 5 v, f = 100 mhz f t - 170 - mhz collector-base capacitance f = 1 mhz, v be = 10 v c cb - 3 - pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 40 - 1 pulse test: t < 300s; d < 2%
3 2008-10-20 BC817SU dc current gain h fe = ? ( i c ) v ce = 1 v 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 a i c 1 10 2 10 3 10 h fe 125 c 85 c 25 c - 40 c collector-emitter saturation voltage i c = ? ( v cesat ), h fe = 10 10 -4 10 -3 10 -2 10 -1 10 0 a i c 0 0.1 0.2 v 0.4 u ce 150 c 25 c - 50 c base-emitter saturation voltage i c = ( v besat ), h fe = 10 10 -4 10 -3 10 -2 10 -1 10 0 a i c 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v 1.5 u be 150 c 25 c - 50 c collector cutoff current i cbo = ? ( t a ) v cbo = 25 v 0 10 ehp00221 bc 817/818 a t 150 0 5 10 cbo na 50 100 1 10 2 10 4 10 ?c typ max 10 3
4 2008-10-20 BC817SU transition frequency f t = ? ( i c ) v ce = parameter in v, f = 2 ghz 10 ehp00218 bc 817/818 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz total power dissipation p tot = ? ( t s ) 0 50 c 150 t s 0 200 400 600 800 mw 1200 p tot permissible pulse load r thjs = ? ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 r thjs d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
5 2008-10-20 BC817SU package sc74 package outline foot print standard packing 0.5 0.95 1.9 2.9 54 6 3 2 1 1.1 max. (0.35) (2.25) ?.2 2.9 b 0.2 +0.1 -0.05 0.35 pin 1 marking m b 6x 0.95 1.9 0.15 -0.06 +0.1 1.6 10? max. a ?.1 2.5 0.25 10? max. ?.1 ?.1 a 0.2 m 0.1 max. 2.7 4 3.15 pin 1 marking 8 0.2 1.15 reel ?80 mm = 3.000 pieces/reel reel ?30 mm = 10.000 pieces/reel for symmetric types no defined pin 1 orientation in reel. manufacturer 2005, june date code (year/month) bcw66h type code pin 1 marking laser marking marking layout (example) small variations in positioning of date code, type code and manufacture are possible.
6 2008-10-20 BC817SU edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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